Erratum to “Characterization and Modeling of Reduced-Graphene Oxide Ambipolar Thin-Film Transistors”
نویسندگان
چکیده
In the above article [1] , an error is present in ref-type="disp-formula" rid="deqn1" xmlns:xlink="http://www.w3.org/1999/xlink">(1) . The correct equation should read as shown at bottom of page.
منابع مشابه
High-mobility ambipolar ZnO-graphene hybrid thin film transistors
In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 ± 16.9 cm(2)/V·s, and a high on-off ratio of 10(5). The ambipolar...
متن کاملModeling and Simulation of Flexible Oxide Thin Film Transistors
Electrical characteristic of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) on flexible substrate are investigated with various channel width and length. Its electrical properties according to the physical dimension of the channel are analyzed through Technology Computer-Aided Design (TCAD) simulation. Index Terms — Density of states (DOS), flexible, In-GaZn-O (IGZO),...
متن کاملErratum: Reduced Graphene Oxide Thin Film on Conductive Substrates by Bipolar Electrochemistry
Recent years have shown an increased interest in developing manufacturing processes for graphene and its derivatives that consider the environmental impact and large scale cost-effectiveness. However, today's most commonly used synthesis routes still suffer from their excessive use of harsh chemicals and/or the complexity and financial cost of the process. Furthermore, the subsequent transfer o...
متن کاملTin oxide transparent thin-film transistors
A SnO2 transparent thin-film transistor (TTFT) is demonstrated. The SnO2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O2 at 600 ̊C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10–20 nm). Maximum field-effect mobilities of 0.8 cm2 V−1 s−1 and 2.0 cm2 V−1 s−1 are obtained for enhancem...
متن کاملCharacterization of Polycrystalline Silicon Thin-Film Transistors
The nonlinear behavior of the transfer characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) at the threshold voltage was analyzed. The threshold voltage VT was defined as the gate voltage giving half of the maximum transconductance (GmMAX=2). The nonlinear parameter V was also introduced as the maximum transconductance divided by the differential of Gm at VT. VT and V...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2022
ISSN: ['0018-9383', '1557-9646']
DOI: https://doi.org/10.1109/ted.2022.3205564